EDN

SiC transistors drive solar inverter efficiency

MUNICH, Germany — The Fraunhofer Institute for Solar Energy Systems (Freiburg, Germany) claims it has achieved a record efficiency for its inverter designed for PV generators. Key to the high ...
Electronics Weekly

APEC: small GaN transistors improve EV IGBT traction inverters

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower cost than all-silicon-carbide inverters, it said. It involves connecting GaN ...
科学技術振興機構

Next-generation power inverter based on interface-controlled GaN high-electron-mobility transistors

We intend to establish fundamental and elemental technologies for a high-performance GaN power inverter that will act as a core device in energy saving technologies. The research includes ...
pv magazine International

Kaco unveils string inverters with silicon carbide transistors

German inverter manufacturer Kaco new energy, a subsidiary of German industrial conglomerate Siemens, has unveiled two string inverters for applications in large-scale PV projects. The two ...