CMOS opened the door for many if not most of the properties needed for today’s highly integrated circuits and low power portable and mobile devices. This really couldn’t happen until the speeds and ...
Label-Free C-Reactive Protein Si Nanowire FET Sensor Arrays With Super-Nernstian Back-Gate Operation
“We present a CMOS-compatible double gate and label-free C-reactive protein (CRP) sensor, based on silicon on insulator (SOI) silicon nanowires arrays. We exploit a reference subtracted detection ...
A layout-dependent circuit-design model from Toshiba helps boost gate density and improve cost-performance in next-generation 45-nm CMOS technology. More specifically, 45-nm CMOS gate density can be 2 ...
Density and speed of IC’s have increased exponentially for several decades, following a trend described by Moore’s Law. While it is accepted that this exponential improvement trend will end, it is ...
CMOS devices have large input impedance with input currents on the order of 0.01nA. Adding feedback circuitry can result in a latch-like device that can be used to store bits, and also operate in a ...
Leakage in IC designs constitutes a significant amount of power dissipation because CMOS gates are not ideal switches. The leakage in CMOS gates varies significantly for different combinations of ...
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