Replacement Gate High-k/Metal Gate nMOSFETs Using A Self-Aligned Halo-Compensated Channel Implant Mitigate the magnitude of potential drop beyond saturation at the drain end so that the long-channel ...
Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs). These two modes are the metal-insulator–semiconductor (MIS) structure, 2 ...
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