TL;DR: Samsung Electronics has successfully developed its 10nm-class 6th-generation D1c DRAM process, enabling advanced HBM4 memory production. This breakthrough enhances chip stability, reduces ...
TL;DR: Samsung is redesigning its 6th-generation 1c DRAM to improve yield rates and support its next-gen HBM4 process. The redesign aims to address issues with chip size and stability, which ...
ChangXin Memory Technologies (CXMT) has accelerated its next-generation DRAM development, transitioning from 17nm to 16nm process technology for its first DDR5 product, according to TechInsights. The ...
For decades, compute architectures have relied on dynamic random-access memory (DRAM) as their main memory, providing temporary storage from which processing units retrieve data and program code. The ...
Micron Technology, Inc., has announced production sampling of its new 1Gb DDR2 device fabricated on 68-nanometer (nm) DRAM process technology. The new process, coupled with Micron’s 6F² technology, ...
TAICHUNG, Taiwan, Dec. 11, 2025 /PRNewswire/ -- Winbond Electronics Corporation, a leading global supplier of semiconductor memory solutions, today announced the release of its new 8Gb DDR4 DRAM, ...
Despite a 22% drop in the last six months, I remain bullish on Applied Materials due to strong AI-driven DRAM demand. The AI era's rapid expansion is supercharging DRAM needs, positioning AMAT well ...
A new technical paper titled “Novel STI Technology for Enhancing Reliability of High-k/Metal Gate DRAM” was published by researchers at Sungkyunkwan University and Samsung Electronics. “The challenges ...
Micron is now shipping its first new RAM built on its 1 alpha process node, with a 40 percent improvement in bit density and power consumption improvements of up to 20 percent. Share on Facebook ...
What just happened? The Seoul Central District Prosecutors' Office has indicted 10 former Samsung Electronics employees for violating South Korea's Industrial Technology Protection Act, which ...
Seoul prosecutors have arrested and indicted three former employees of Samsung Electronics for allegedly leaking advanced nanoscale DRAM process technology to China's Changxin Memory Technologies ...
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