Japan's Fuji Electric has launched a new high-power module in its next-core series based on its latest insulated-gate bipolar transistor (IGBT) platform with diodes that feature a free-wheeling diode ...
Recent developments in IGBT and FWD (free wheeling diode) devices are enabling designers to achieve higher switching performance, lower electrical losses, and higher temperature operation in high ...
New IXIDM1401 driver module combines supreme compactness with the highest performance and reliability. IXYS’ objective is to serve the market with IGBT driver parts that enable a short design circle ...
With the increasing demand for improving system efficiencies, the development of the low loss, high current, high voltage, rugged power modules for high frequency power electronic applications is of ...
This paper presents a novel 3-phase IGBT module called the SPM (Smart Power Module). This is a new design developed to provide a very compact, low cost, high perfor- mance and reliable motor drive ...
New power modules have an optimized high-efficiency, compact, and durable design that is ideal for BLDC motor drives The Mega IPM7 series is AOS’ new generation of intelligent power modules engineered ...
Press-Pack Insulated Gate Bipolar Transistors (IGBTs) represent a robust class of semiconductor devices optimised for high-power applications. Unlike conventional IGBT modules that utilise wire ...
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