TOKYO--(BUSINESS WIRE)--Toshiba Corporation's (TOKYO:6502) Storage & Electronic Devices Solutions Company today announced the launch of "TB9150FNG," an opto-isolated IGBT [1] gate pre-driver IC with ...

Magnachip Semiconductor has developed a 1,200-V, 75-A insulated gate bipolar transistor (IGBT) in a TO-247PLUS package for applications that depend on strict power ratings and high efficiency. Meeting ...

Recent developments in IGBT and FWD (free wheeling diode) devices are enabling designers to achieve higher switching performance, lower electrical losses, and higher temperature operation in high ...

Magnachip to Expand Its Industrial IGBT Business Based on Advanced Traction Inverter IGBT Technology Jointly Developed in Strategic Partnership with Hyundai Mobis - Magnachip to leverage accumulated ...

This paper presents a novel 3-phase IGBT module called the SPM (Smart Power Module). This is a new design developed to provide a very compact, low cost, high perfor- mance and reliable motor drive ...

New power modules with solderable pin terminals have changed the structure of inverters in applications up to 20kW. The new EconoPACK+ package was designed to fill the gap between 20kW and 100kW ...

The impact the Japan earthquake has on photovoltaic (PV) inverters will be determined by the supply of insulated gate bipolar transistor (IGBT) since Japan represents 30% of global production output.

Semikron has added a new topology for use in three-level inverters to its Semitop IGBT product range. The topology integrates IGBT technology with lower switching and conduction losses to produce ...

Magnachip Semiconductor is about to start volume production of a 650V IGBT for solar inverters. In March 2022, Magnachip developed a 65 IGBT built with field stop trench technology for fast switching ...

SEOUL, South Korea, November 03, 2025--(BUSINESS WIRE)--Magnachip Semiconductor Corporation (NYSE: MX) ("Magnachip" or the "Company") today announced it has concluded an agreement with Hyundai Mobis ...