The P-channel power MOSFET of IXYS retail all features of the comparable N-channel power MOSFET such as very fast switching, voltage control, ease of paralleling and excellent temperature stability.

Given the maturity of MOSFETs, selecting one for your next design may seem deceptively simple. Engineers are familiar with the figures of merit on a MOSFET data sheet. Selecting a MOSFET requires the ...

Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...

International Rectifier announces an automotive DirectFET2 power MOSFET chipset optimized for dc-dc applications used in internal combustion engine (ICE) cars, hybrid, and electric vehicles.

TOKYO--(BUSINESS WIRE)--Toshiba Corporation’s (TOKYO:6502) Semiconductor & Storage Products Company today announced the launch of a -40V P-ch power MOSFET for automobile applications. The latest ...

A Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a fundamental building block of modern electronics. It is a field-effect transistor (FET) where the voltage applied to a terminal (gate) ...

Nexperia has created a mosfet for automotive airbags, the n-channel 60V 40A 13mΩ(max) BUK9M20-60EL. The logic-level device comes in 3.3 x 3.3mm SOT1210 ‘LFPAK33’ packaging and has “enhanced ...

Dublin, Jan. 27, 2025 (GLOBE NEWSWIRE) -- The "IGBT and Super Junction MOSFET - Global Strategic Business Report" report has been added to ResearchAndMarkets.com's offering. The global market for IGBT ...

ROHM has developed a 30V N-channel MOSFET, the AW2K21, in a common-source configuration that achieves an ON-resistance of 2.0mΩ (typ.) in a compact 2.0mm × 2.0mm package. The AW2K21 has adopted a ...

Diamond is largely recognized as the ideal material in wide bandgap development, but realizing its full potential in field-effect transistors has been challenging. Researchers incorporate a new ...