Isolated IGBT gate driver requires isolated power supply for safety isolation and level shifting. Unfortunately design of isolated power supply based on standard power control IC is not trivial.

While attending APEC 2019, it seemed that gallium-nitride (GaN) transistors were just coming into their own in high-volume applications, while silicon-carbide (SiC) transistors have found wide ...

TOKYO--(BUSINESS WIRE)--Toshiba Corporation's (TOKYO:6502) Storage & Electronic Devices Solutions Company today announced the launch of "TB9150FNG," an opto-isolated IGBT [1] gate pre-driver IC with ...

Our 1ED44173/5/6 are the new low side gate driver ICs that integrate over-current protection (OCP), FAULT status output and enable function. This high integration level is excellent for the digitally ...

The VLA502-01 is a hybrid integrated circuit (Figure 1) intended as a gate driver for high power IGBT modules. This circuit has been optimized for use with Powerex NFH-Series IGBT modules. However, ...

Santa Clara, CA and Kyoto, Japan, June 25, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the BM6GD11BFJ-LB, an isolated gate driver IC optimized for driving 600V-class ...

For the gate drivers of high-power IGBTs, mosfets, SiC mosfets and GaN hemts, Infineon has introduced an isolated power supply IC that can generate asymmetric output voltage rails. Each member of the ...

DALLAS, March 15, 2019 /PRNewswire/ -- Texas Instruments (TI) (NASDAQ:TXN) today introduced several new isolated gate drivers that provide unparalleled levels of monitoring and protection for ...

Distributor Rutronik is stocking an isolated single-channel gate driver for GaN hemts that comes in a 4.9 x 6 x 1.65mm SOP-JW8 package. Made by Rohm and called BM6GD11BFJ-LB, they have “an isolation ...

Isolated IGBT gate driver requires isolated power supply for safety isolation and level shifting. Unfortunately design of isolated power supply based on standard power control IC is not trivial.