Figure 1 shows the analyzed MV 30mH inductor. It has been rated at the level of 10 A and is based on the nanocrystalline magnetic core. Double pulse test in the laboratory circuit diagram is shown in ...

In recent years, the proliferation of next-generation electric vehicles (xEVs) has been accelerating the development of smaller, lighter, and more efficient electrical systems. In particular, ...

ROHM is now mass-producing the industry’s first trench-type SiC MOSFET. Utilizing a proprietary trench structure, the process results in improved switching performance (approx. 35% lower input ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched new power devices, the “TWxxNxxxC series,” its 3rd generation silicon carbide(SiC) MOSFETs ...

Will contribute to more efficient circuit designs for power converters The SiC-MOSFET controls the current (drain current) flowing from the drain electrode to the source electrode depending on the ...

As new power transistors such as SiC MOSFETs are being increasingly used in power electronics systems, it has become necessary to use special drivers. Isolated gate drivers are designed for the ...

Microchip has added 700V discrete SiC mosfets and both 700V and 1.2kV discrete SiC Schottky diodes, totalling 34 parts, to its portfolio of SiC power modules. “Microchip is one of the few suppliers to ...

TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “TW070J120B,” a 1200V silicon carbide (SiC) MOSFET for industrial applications that include large ...

Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated ...

Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...

Kyoto, Japan and Santa Clara, CA, June 17, 2020 (GLOBE NEWSWIRE) -- ROHM announces the cutting-edge 4 th Generation 1200V SiC MOSFETs optimized for automotive powertrain systems, including the main ...