In recent years, the proliferation of next-generation electric vehicles (xEVs) has been accelerating the development of smaller, lighter, and more efficient electrical systems. In particular, ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched new power devices, the “TWxxNxxxC series,” its 3rd generation silicon carbide(SiC) MOSFETs ...
ROHM is now mass-producing the industry’s first trench-type SiC MOSFET. Utilizing a proprietary trench structure, the process results in improved switching performance (approx. 35% lower input ...
As new power transistors such as SiC MOSFETs are being increasingly used in power electronics systems, it has become necessary to use special drivers. Isolated gate drivers are designed for the ...
Will contribute to more efficient circuit designs for power converters The SiC-MOSFET controls the current (drain current) flowing from the drain electrode to the source electrode depending on the ...
TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “TW070J120B,” a 1200V silicon carbide (SiC) MOSFET for industrial applications that include large ...
ON Semiconductor has brought out a pair of 1200V SiC MOSFET 2-PACK modules for the EV charger market. EC charging stations require power levels in excess of 350 kW with efficiencies of 95% becoming ...
Electrical power designs are driven by market needs for increased efficiency and improved productivity while conforming to regulatory requirements. The overriding end user need is almost always for ...
Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated ...
Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...
GaN and SiC mosfets were tested and compared by a distribution company using the GaNdalf modular development platform. David Woodcock reports on the findings. The traditional silicon power mosfet is a ...
Kyoto, Japan and Santa Clara, CA, June 17, 2020 (GLOBE NEWSWIRE) -- ROHM announces the cutting-edge 4 th Generation 1200V SiC MOSFETs optimized for automotive powertrain systems, including the main ...
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