IEEE

Compact Modeling of Drain Current, Charges, and Capacitances in Long-Channel Gate-All-Around Negative Capacitance MFIS Transistor

Abstract: In this paper, we present a surface potential-based explicit continuous model for a metal-ferroelectric-insulator-semiconductor (MFIS) type gate-all-around negative capacitance transistor ...
IEEE

Analysis of ON Current and Ambipolar Current for Source Pocket Gate-Drain Underlap Double Gate Tunnel Field Effect Transistor

Abstract: In this research, a unique gate-drain underlapping source pocket double gate tunnel field effect transistor (SP-DGTFET) has been proposed. The proposed TFET suppresses the ambipolar ...
The Motley Fool

Billionaire Bill Gates Has 30% of His Foundation's $36 Billion Portfolio Invested in This Warren Buffett Stock

The Gates Foundation Trust's top holding isn't the stock many might expect. The Gates Foundation Trust's largest holding is Warren Buffett favorite. And roughly 30% of its $36 billion portfolio is ...
pv magazine International

High-capacity gutter for efficient solar panel drainage

The rapid growth of rooftop photovoltaic installations is profoundly changing the management of rainwater. By waterproofing and channeling surfaces, solar panels accelerate water runoff and increase ...
C&EN

Liquid Crystal-Gated-Organic Field-Effect Transistors with In-Plane Drain–Source–Gate Electrode Structure

† Organic Nanoelectronics Laboratory, Department of Chemical Engineering, and ‡ Research Institute of Advanced Energy Technology, Kyungpook National University, Daegu 702-701, Republic of Korea ...