A new technical titled “Impact of Random Phase Distribution on Ferroelectric Tunnel Field-Effect Transistors With Mitigation Strategies for Compute-in-Memory Applications” was published by researchers ...
The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results