Abstract: This study explores the total-ionizing-dose (TID) and displacement damage (DD) effects in trench silicon carbide (SiC) power MOSFETs. The effects of X-ray irradiation reveal significant ...
Abstract: With the body diode of Silicon Carbide Metal Oxide Field Effect Transistor (SiC MOSFET) as the freewheeling diode (FWD) in the circuit that is widely used, its reverse recovery performance ...
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