Abstract: An 8.5-Gb/s/pin (Gb/s) 12-Gb LPDDR5 SDRAM is implemented in a second-generation 10-nm DRAM process with a hybrid-bank architecture that provides a power-optimized bank solution depending on ...
Abstract: With the development of massive computing and AI technologies, the memory interface is critical to achieve higher computational throughput. Increasing the parallel-channel density is an ...
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