Abstract: An analysis of Gallium Nitride (GaN) transistor and power amplifiers (PAs) behavior under modulated signal excitation is presented. Using a passive load-pull system and a large-signal vector ...
Abstract: This study introduces a cross field-effect transistor (CrossFET) design, which features two orthogonally crossed transistors: an n-channel field-effect transistor (NFET) and a p-channel ...
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