Abstract: Multiple parallel insulated-gate bipolar transistor (IGBT) modules can enhance the current-carrying capacity of a power converter. However, due to parameter inconsistency of IGBT modules and ...

Abstract: Accurate junction temperature prediction in multichip insulated gate bipolar transistor (IGBT) modules is paramount for ensuring the reliability and efficiency of power electronic systems.

Hydronuclear experiments, barred globally since the 1990s, may lie behind President Trump’s call last month for the United States to resume its testing of nuclear bombs. By William J. Broad President ...

At celduc relais, DC power switching is under control! The IGBT based SSR (SDI range) can switch up to 100 A @ 750 VDC nominal in a fast, reliable and safe way. Here are the main characteristics of ...