Abstract: This paper presents design considerations along with measurement results pertinent to hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) drive circuits for active matrix ...
Abstract: This letter reports a GaN vertical fin power field-effect-transistor structure with submicron fin-shaped channels on bulk GaN substrates. In this vertical transistor design only n-GaN layers ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results