IRFZ44N - N-channel MOSFETs | Infineon Technologies
IRFZ44N is a N-channel power MOSFETs with VDS max: 55 V, RDS (on) max: 17.5 mOhm, Package: TO-220, Technology: IR MOSFET™, ID max: 49 A
IRFZ44N by NXP USA Inc. Datasheet | DigiKey
View IRFZ44N by NXP USA Inc. datasheet for technical specifications, dimensions and more at DigiKey.
IRFZ44N: The Ultimate Guide to This Powerful MOSFET Transistor
This article provides an overview of the IRFZ44N, including its features, applications, pin configuration, circuit design, electrical characteristics, available alternatives, and troubleshooting tips.
IRFZ44N Datasheet (PDF) - NXP Semiconductors
Description: N-channel enhancement mode TrenchMOS transistor. Manufacturer: NXP Semiconductors.
IRFZ44N MOSFET Datasheet: N-Ch, 55V, 49A. Full specification with ...
The IRFZ44N is an N-channel power MOSFET widely used in switching and amplification applications. It features a low on-resistance of 0.017Ω, allowing high current conduction up to 49A, with a drain …
IRFZ44N: Features, Applications, and Circuit Design Guide
Jun 3, 2025 · The IRFZ44N MOSFET is specifically designed for applications like motor drivers, inverters, SMPS, and LED systems. And, this is because of its high current carrying capacity, low on …
How to Use IRFZ44N: Examples, Pinouts, and Specs - Cirkit Designer
Learn how to use the IRFZ44N with detailed documentation, including pinouts, usage guides, and example projects. Perfect for students, hobbyists, and developers integrating the IRFZ44N into their …
Guide to IRFZ44N MOSFET Pinout, Equivalent and FAQs
IRFZ44N is an N-Channel MOSFET capable of switching high voltage and current levels. It is popularly known for reliability and durability as it has a maximum drain-to-source voltage of 55v and drain …
enhancement mode transistor IRFZ44N GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device …
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.